CASC GaN products won’t be deliver to customers before comprehensive qualifications, to ensure performance repeatability and reliability.
Hi-T Static Reliability
D-mode GaN devices (cascode or driver IC co-pack) yield better static/dynamic reliabilities over its e-mode counterparts, which benefits high-power applications.
1008HR HTRB/HTGB qualified by external lab and customers
Electrical properties variation less than 10% after test
Hi-T Dynamic Reliability
D-mode GaN devices (cascode or driver IC co-pack) yield better static/dynamic reliabilities over its e-mode counterparts, which benefits high-power applications.
Excellent behavior of Dynamic RDS(on) Ratio vs. Stress Voltage
CASC power GaN products provide 20～50% less conduction loss!
650V GaN HEMT Die Series
Product Feature
This power GaN HEMT die is designed and manufactured in house with purpose to achieve highest reliability and flexibility by integration with other activation devices, such as LV-MOS, Driver and Controller.
