• D-mode GaN devices (cascode or driver IC co-pack) yield better static/dynamic reliabilities over its e-mode counterparts, which benefits high-power applications.

• 1008HR HTRB/HTGB qualified by external lab and customers

• Electrical properties variation less than 10% after test

• D-mode GaN devices (cascode or driver IC co-pack) yield better static/dynamic reliabilities over its e-mode counterparts, which benefits high-power applications.

• Excellent behavior of Dynamic RDS(on) Ratio vs. Stress Voltage

• CASC power GaN products provide 20～50% less conduction loss!

• Product Feature

This power GaN HEMT die is designed and manufactured in house with purpose to achieve highest reliability and flexibility by integration with other activation devices, such as LV-MOS, Driver and Controller.

• Power Discrete Product Family

• Product Feature

This GaN Power IC co-packaged HV-GaN and silicon driver IC to simplify system circuit design, reduce PCB size & cost, and suppress gate voltage overshoot. This System-In-Package (SIP) solution guaranteed better long-term switching reliability performance

• Application

Consumer, power adapter, low-power SMPS, Home Appliance

• Product Feature

This GaN Power Controller IC co-packaged HV-GaN and silicon IC (QF-Flyback) to simplify  system circuit design, reduce PCB size & cost, and EMI issues. This System-In-Package (SIP) solution guaranteed better long-term switching reliability and thermal drift

• Application

Power adapter, low-power SMPS, Home Appliance